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Creators/Authors contains: "Marshall, Daniel_S"

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  1. ; ; ; ; (, Advanced Theory and Simulations)
    Abstract The state‐of‐the‐art magnetic tunnel junction, a cornerstone of spintronic devices and circuits, uses a magnesium oxide tunnel barrier that provides a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment of magnesium oxide‐iron systems increases the resistance‐area product and creates variability and breakdown challenges. Here, the authors study using first principles narrower‐bandgap scandium nitride (ScN) transport properties in magnetoresistive junctions in comparison to magnesium oxide. The results show a high magnetoresistance in Fe/ScN/Fe via Δ1and symmetry filtering with low wave function decay rates, suggesting scandium nitride could be a new barrier material for spintronic devices. 
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